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1-A Dual-HBD (Dual-Half-Bridge Driver)
TLE 4207
Overview Features * Delivers up to 0.8 A continuous * Optimized for DC motor management applications * Very low current consumption in stand-by (Inhibit) mode * Low saturation voltage; typ.1.2 V total @ 25 C; 0.4 A * Output protected against short circuit * Error flag diagnosis * Overvoltage lockout and diagnosis * Undervoltage lockout * CMOS/TTL compatible inputs with hysteresis * No crossover current * Internal clamp diodes * Overtemperature protection with hysteresis and diagnosis * Enhanced power P-DSO-Package
P-DSO-14-4
P-DSO-20-6
Type TLE 4207 G TLE 4207 GL Description
Ordering Code Q67006-A9275 on request
Package P-DSO-14-4 P-DSO-20-6
The TLE 4207 is a fully protected Dual-Half-Bridge-Driver designed specially for automotive and industrial motion control applications. The part is built using the Siemens bipolar high voltage power technology DOPL. The actuator (DC motor) can be connected direct between the halfbridges. Operation modes forward (cw), reverse (ccw), brake and high impedance are invoked from a standard interface. The standard enhanced power P-DSO-14 package meets the application requirements and saves PCB-board space and costs. Furthermore the built in features like diagnosis, over- and undervoltage-lockout, shortcircuit-protection, over-temperature-protection and the very low quiescent current in stand-by mode will open a wide range of automotive and industrial applications.
Semiconductor Group 1 1998-02-01
TLE 4207
VS OUT2 GND GND GND IN2 INH
1 14 2 13 3 12 TLE 4 11 4207G 5 10 6 9 7 8
AEP02303
N.C. OUT1 GND GND GND IN1 EF
VS OUT2 N.C. GND GND GND GND N.C. IN2 INH
1 2 3 4 5 6 7 8 9 10
TLE 4207GL
20 19 18 17 16 15 14 13 12 11
N.C. OUT1 N.C. GND GND GND GND N.C. IN1 EF
AEP02304
Figure 1
Pin Configuration (top view)
Pin Definitions and Functions Pin No. Pin No. Symbol Function P-DSO-14-4 P-DSO-20-6 1 2 3, 4, 5, 10, 11, 12 6 7 8 9 13 14 1 2 4, 5, 6, 7, 14, 15, 16, 17 9 10 11 12 19 3, 8, 13, 18, 20
VS
OUT2 GND
Power supply voltage; positive reference potential for blocking capacitor Power-output 2; full short circuit protected; with integrated clamp diodes Ground; negative reference potential for blocking capacitor Input channel 2; controls OUT2 (not inverted) Inhibit input; low = IC in stand-by Error Flag output; open collector; low = error Input channel 1; controls OUT1 (not inverted) Power output 1; full short circuit protected; with integrated clamp diodes Not connected
IN2 INH EF IN1 OUT1 N.C.
Semiconductor Group
2
1998-02-01
TLE 4207
VS
1 7
INH
Inhibit DRV1
EF
8
Fault-Detection
13
OUT1
IN1 IN2
9 6
INH 0 1 1 1 1
IN1 X 0 0 1 1
IN2 X 0 1 0 1
OUT1 OUT2 Z Z L L L H H L H H
DRV2 2 OUT2
TLE 4207G
3, 4, 5, 10, 11, 12 GND
AEB02080
Figure 2
Block Diagram
Semiconductor Group
3
1998-02-01
TLE 4207
Functional Truth Table INH 0 1 1 1 1 IN1 X 0 0 1 1 IN2 X 0 1 0 1 OUT1 Z L L H H OUT2 Z L H L H Mode Stand-By Brake LL CW CCW Brake HH
IN: 0 = Logic LOW 1 = Logic HIGH X = don't care Diagnosis EF 1 0 0 Error no error over temperature over voltage
OUT: Z = Output in tristate condition L = Output in sink condition H = Output in source condition
Semiconductor Group
4
1998-02-01
TLE 4207
Electrical Characteristics Absolute Maximum Ratings Parameter Symbol Limit Values min. Voltages Supply voltage Supply voltage Logic input voltages (IN1; IN2; INH) Logic output voltage (EF) Currents Output current (cont.) Output current (peak) Output current (diode) Output current (EF) Temperatures Junction temperature Storage temperature Thermal Resistances Junction pin Junction ambient max. Unit Remarks
VS VS VI VEF
- 0.3 -1 -5 - 0.3
45 - 20 20
V V V V
-
t < 0.5 s; IS > - 2 A 0 V < VS < 45 V
0 V < VS < 45 V
IOUT1-2 IOUT1-2 IOUT1-2 IOUT1-2
- - -1 -2
- - 1 5
A A A mA
internally limited internally limited - -
Tj Tstg
- 40 - 50
150 150
C C
- -
Rthj-pin RthjA
- -
25 65
K/W K/W
measured to pin 5 -
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.
Semiconductor Group
5
1998-02-01
TLE 4207
Operating Range Parameter Supply voltage Supply voltage increasing Supply voltage decreasing Logic input voltage (IN1; IN2; INH) Junction temperature Symbol Limit Values min. max. V After VS rising above VUV ON Outputs in tristate Outputs in tristate - - Unit Remarks
VS VS VS VI Tj
VUV OFF 18
- 0.3 - 0.3 -2 - 40
VUV ON V VUV OFF V
18 150 V C
Note: In the operating range the functions given in the circuit description are fulfilled.
Semiconductor Group
6
1998-02-01
TLE 4207
Electrical Characteristics 8 V < VS < 18 V; INH = High; IOUT1-2 = 0 A; - 40 C < Tj < 150 C; unless otherwise specified Parameter Symbol Limit Values min. Current Consumption Quiescent current Quiescent current typ. max. Unit Test Condition
IS IS
- -
20 20
50 30
A A
INH = LOW INH = LOW; VS = 13.2 V; Tj = 25 C -
Supply current Supply current Supply current
IS IS IS
- - -
10 - -
20 30 50
mA mA mA
IOUT1 = 0.4 A IOUT2 = - 0.4 A IOUT1 = 0.8 A IOUT2 = - 0.8 A
Over- and Under Voltage Lockout UV Switch ON voltage UV Switch OFF voltage UV ON/OFF hysteresis OV Switch OFF voltage OV Switch ON voltage OV ON/OFF hysteresis
VUV ON VUV OFF VUV HY VOV OFF VOV ON VOV HY
- 5.0 - - 18.0 -
6.5 6 0.5 20 0.5
7.5 - - 24 -
V V V V V V
19.5 -
VS increasing VS decreasing VUV ON - VUV OFF VS increasing VS decreasing VOV OFF - VOV ON
Semiconductor Group
7
1998-02-01
TLE 4207
Electrical Characteristics (cont'd) 8 V < VS < 18 V; INH = High; IOUT1-2 = 0 A; - 40 C < Tj < 150 C; unless otherwise specified Parameter Symbol Limit Values min. Outputs OUT1-2 Saturation Voltages Source (upper) IOUT = - 0.2 A Source (upper) IOUT = - 0.4 A Sink (upper) IOUT = - 0.8 A Sink (lower) IOUT = 0.2 A Sink (lower) IOUT = 0.4 A Sink (lower) IOUT = 0.8 A Total Drop Total Drop Total Drop typ. max. Unit Test Condition
VSAT U VSAT U VSAT U VSAT L VSAT L VSAT L
- - - - - -
0.85 1.15 0.90 1.20 1.10 1.50 0.15 0.23 0.25 0.40 0.45 0.75
V V V V V V
Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C Tj = 25 C
IOUT = 0.2 A IOUT = 0.4 A IOUT = 0.8 A
VSAT VSAT VSAT
- - -
1 1.2 1.6
1.4 1.7 2.5
V V V
VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L VSAT = VSAT U + VSAT L
Clamp Diodes Forward voltage; upper Upper leakage current Forward voltage; lower
Notes see page 10.
VFU ILKU VFL
- - -
1 - 0.9
1.5 5 1.4
V mA V
IF = 0.4 A IF = 0.4 A1) IF = 0.4 A
Semiconductor Group
8
1998-02-01
TLE 4207
Electrical Characteristics (cont'd) 8 V < VS < 18 V; INH = High; IOUT1-2 = 0 A; - 40 C < Tj < 150 C; unless otherwise specified Parameter Symbol Limit Values min. Input-Interface Logic Inputs IN1; IN2 H-input voltage L-input voltage Hysteresis of input voltage H-input current L-input current Logic Input INH H-input voltage L-input voltage Hysteresis of input voltage H-input current L-input current Error-Flag EF L-output voltage level Leakage current typ. max. Unit Test Condition
VIH VIL VIHY IIH IIL
- 1 - -2
2 1.5 0.5 -
3 - - 10
V V V A A
- - -
- 100 - 20 - 5
VI = 5 V VI = 0 V
VIH VIL VIHY IIH IIL
- 1 - - - 10
2.7 2 0.7 -
3.5 - - 10
V V V A A
- - -
100 250
VINH = 5 V VINH = 0 V
VEFL IEFLK
- -
0.2 -
0.4 10
V A
IEF = 2 mA 0 V < VEF < 7 V
Semiconductor Group
9
1998-02-01
TLE 4207
Electrical Characteristics (cont'd) 8 V < VS < 18 V; INH = High; IOUT1-2 = 0 A; - 40 C < Tj < 150 C; unless otherwise specified Parameter Symbol Limit Values min. Thermal Shutdown Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis
1)
Unit Test Condition
typ. max.
TjSD TjSO
T
150 120 -
175 200 - 30 170 -
C C K
- - -
Guaranteed by design.
Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical characteristics specify mean values expected over the production spread. If not otherwise specified, typical characteristics apply at TA = 25 C and the given supply voltage.
Semiconductor Group
10
1998-02-01
TLE 4207
Watchdog Reset Q
TLE 4268G D
I DO1 1N4001 GND
VS = 12 V CS 22 F
RQ 10 k
WD R VCC
CQ 22 F
CD 100 nF
VS
1 INH 7
Inhibit DRV1
EF 8
Fault-Detection
13 OUT1
P IN1 9 IN2 6 INH 0 1 1 1 1 IN1 X 0 0 1 1 IN2 X 0 1 0 1 OUT1 OUT2 Z Z L L L H H L H H DRV2 2 OUT2
M1
TLE 4207G
3, 4, 5, 10, 11, 12 GND
AES02081
Figure 3
Application Circuit
Semiconductor Group
11
1998-02-01
TLE 4207
Diagrams Quiescent current IS over Temperature
S
50
AED02307
Saturation Voltage of Source VSAT U over Temperature
1500
AED02308
A
40
V SAT U
1250 mV 1000
VS = 14 V
OUT = 800 mA OUT = 400 mA
30
750
OUT = 200 mA
20
V S = 18 V
10
500
V S = 13.2 V VS = 8 V
250
0 -50
0
50
100 C 150
0 -50
0
50
100 C 150
Tj
Tj
Saturation Voltage of Sink VSAT L over Temperature
1000
AED02309
Total Drop at outputs VSAT over Temperature
2000
AED02310
V SAT L
mV 750
VS = 14 V
V SAT
mV 1500
VS = 14 V
OUT = 800 mA
OUT = 400 mA
500
OUT = 800 mA
1000
OUT = 200 mA
OUT = 400 mA
250
500
OUT = 200 mA
0 -50
0
50
100 C 150
0 -50
0
50
100 C 150
Tj
Tj
Semiconductor Group
12
1998-02-01
TLE 4207
Package Outlines P-DSO-14-4 (Plastic Dual Small Outline Package)
0.35 x 45
1.75 max 1.45 -0.2
0.19 +0.06
0.2 -0.1
4 -0.2
1)
1.27 0.35 +0.15 2) 14 0.1 0.2 14x 6 0.2 8 0.4 +0.8
1 7 8.75 -0.21) Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side
GPS05093
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 13
8 max.
Dimensions in mm 1998-02-01
TLE 4207
P-DSO-20-6 (Plastic Dual Small Outline Package)
2.65 max
0.35 x 45
+0.09
2.45 -0.2
0.2 -0.1
7.6 -0.2 1)
1.27 0.35
+0.15 2)
0.4 +0.8 0.2 24x 20 11 0.1 10.3 0.3
GPS05094
1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 14
0.23
8 ma
x
Dimensions in mm
1998-02-01

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